1/7 preliminary data july 2004 SD3933 rf power transistors hf/vhf/uhf n-channel mosfets rev. 1 ? gold metallization ? excellent thermal stability ? common source configuration ? p out = 300 w min. with 28 db gain @ 30mhz description the SD3933 is a gold metallized n-channel mos field-effect rf power transistor. it is intended for use in 100 v dc large signal applications up to 200 mhz. m177 epoxy sealed order codes absolute maximum ratings (t case = 25 c) thermal data order codes marking package packaging SD3933 SD3933 m177 plastic tray symbol parameter value unit v (br)dss drain source voltage 250 v v dgr drain-gate voltage (r gs = 1m w ) 250 v v gs gate-source voltage 20 v i d drain current 20 a p diss power dissipation 648 w t j max. operating junction temperature 200 c t stg storage temperature -65 to +150 c r th(j-c) junction -case thermal resistance 0.27 c/w pin connection 1 3 4 2 1. drain 2. source 3. gate 4. source 5. source 5 4 .com u datasheet
SD3933 2/7 electrical specification (t case = 25 c) static dynamic symbol test conditions min. typ. max. unit v (br)dss v gs = 0 v i ds = 100 ma 250 v i dss v gs = 0 vv ds = 100 v 100 m a i gss v gs = 20 vv ds = 0 v 500 na v gs(q) v ds = 10 v i d = 250 ma 1.5 4.0 v v ds(on) v gs = 10 v i d = 10 a 2.75 5 v g fs v ds = 10 v i d = 5 a 6 8 mho c iss v gs = 0 vv ds = 100 v f = 1 mhz 1100 pf c oss v gs = 0 vv ds = 100 v f = 1 mhz 390 pf c rss v gs = 0 vv ds = 100 v f = 1 mhz 13 pf symbol test conditions min. typ. max. unit p out v dd = 100 vi dq = 250 ma f = 30 mhz 300 w g ps v dd = 100 vi dq = 250 map out = 300 w f = 30 mhz 28 db h d v dd = 100 vi dq = 250 ma p out = 300 w f = 30 mhz 62 % load mismatch v dd = 100 vi dq = 250 ma p out = 300 w f = 30 mhz all phase angles 10:1 vswr typical drain load impedance typical input impedance g zin z dl d s impedance data freq z in ( w ) z dl ( w ) 30 mhz 2 - j 2.5 7 + j 7.5 4 .com u datasheet
3/7 SD3933 typical performance capacitance vs drain source voltage 1 10 100 1000 10000 0 20 40 60 80 100 vds (v) c (pf) ciss coss crss f = 1 mhz drain current vs gate source vo ltage 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 vgs(v) ids (a) tc = +25 c vds = 100 v drain current vs drain source voltage 0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 vds (v) ids (a) tc = +25 c vgs = 10 v gate source voltage vs case temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 tc (c) vgs (v), normalized idq = 250 ma 4 .com u datasheet
SD3933 4/7 typical performance output power vs input power 0 50 100 150 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pin (w) pout (w) f = 30 mhz idq = 250 ma vdd = 80 v vdd = 90 v vdd = 100 v output power vs input power 0 50 100 150 200 250 300 350 400 450 500 0.0 0.2 0.4 0.6 0.8 1.0 pin (w) pout (w) f = 30 mhz vds = 100 v idq = 250 ma tc = +25 c tc = +50 c tc = +70 c tc = +85 c power gain vs output power 20 21 22 23 24 25 26 27 28 29 30 0 100 200 300 400 500 pout (w) gp (db) f = 30 mhz idq = 250 ma vdd = 80 v vdd = 90 v vdd = 100 v power gain vs output power 20 21 22 23 24 25 26 27 28 29 30 0 100 200 300 400 500 pout (w) gp (db) f = 30 mhz vds = 100 v idq = 250 ma tc = +85 c tc = +70 c tc = +50 c tc = +25 c efficiency vs output power 0 10 20 30 40 50 60 70 80 0 100 200 300 400 500 pout (w) nd (%) f = 30 mhz idq = 250 ma vdd = 90 v vdd = 100 v vdd = 80 v efficinecy vs output power 20 30 40 50 60 70 80 0 100 200 300 400 500 pout (w) nd (%) f = 30 mhz vds = 100 v idq = 250 ma tc = +85, +70, +50, +25 c 4 .com u datasheet
5/7 SD3933 typical performance input return loss vs output power -14 -12 -10 -8 -6 -4 -2 0 0 100 200 300 400 pout (w) rtl (db) f = 30 mhz vds = 100 v idq = 250 ma tc = +85, +70, +50, +25 c output power vs supply voltage 0 50 100 150 200 250 300 350 400 450 500 50 60 70 80 90 100 vdd (v) pout (w) f = 30 mhz tc = +25 c pin = 0.62 w pin = 0.36 w output power vs gate source voltage 0 50 100 150 200 250 300 350 400 -2 -1 0 1 2 3 vgs (v) pout (w) pin = 27.8 dbm vdd = 100 v tc = +25 c f = 30 mhz 4 .com u datasheet
SD3933 6/7 m177 (.550 dia 4/l n/herm w/flg) mechanical data mm inch min. typ. max min. typ. max a 5.72 5.97 0.225 0.235 b 6.73 6.96 0.265 0.275 c 21.84 22.10 0.860 0.870 d 28.70 28.96 1.130 1.140 e 13.84 14.10 0.545 0.555 f 0.08 0.18 0.003 0.007 g 2.49 2.74 0.098 0.108 h 3.81 4.32 0.150 0.170 i 7.11 0.280 j 27.43 28.45 1.080 1.120 k 15.88 16.13 0.625 0.635 dim. 1011012d controlling dimension: inches 4 .com u datasheet
7/7 SD3933 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics a 2004 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com 4 .com u datasheet
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